?2007 fairchild semiconductor corporation 1 www.fairchildsemi.com FGH30N60LSD rev. c0 FGH30N60LSD 600 v, 30 a pt igbt april 2013 FGH30N60LSD 600 v, 30 a pt igbt features ? low saturation voltage: v ce(sat) = 1.1 v @ i c = 30 a ? high input impedance ? low conduction loss applications ? solar inverter, ups general description using fairchild ? 's advanced pt technology, the fga30n60lsd igbt offers superior conduction performances, which offer the optimum performance for medium switching applicatio n such as solar inverter, ups applications where low conducti on losses are the most important factor. absolute maximum ratings notes : (1) repetitive rating : pulse width limited by max. junction temperature thermal characteristics symbol description FGH30N60LSD unit v ces collector-emitter voltage 600 v v ges gate-emitter voltage 20 v i c collector current @ t c = 25 c 60 a collector current @ t c = 100 c 30 a i cm (1) pulsed collector current 90 a i fsm non-repetitive peak surge current 60hz single half-sine wave 150 a p d maximum power dissipation @ t c = 25 c 480 w maximum power dissipation @ t c = 100 c 192 w t j operating junction temperature -55 to +150 c t stg storage temperature range -55 to +150 c t l maximum lead temp. for soldering purposes, 1/8 from case for 5 seconds 300 c symbol parameter typ. max. unit r jc (igbt) thermal resistance, junction-to-case -- 0.26 c / w r jc (diode) thermal resistance, junction-to-case -- 0.92 c / w r ja thermal resistance, junction-to-ambient -- 40 c / w g c e g c e to-247 g c e
?2007 fairchild semiconductor corporation 2 www.fairchildsemi.com FGH30N60LSD rev. c0 FGH30N60LSD 600 v, 30 a pt igbt package marking and ordering information electrical characteristics of the igbt t c = 25c unless otherwise noted device marking device package packaging type qty per tube max qty per box FGH30N60LSD FGH30N60LSDtu to-247 tube 30ea - symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 250ua 600 -- -- v ? b vces / ? t j temperature coefficient of breakdown voltage v ge = 0v, i c = 250ua -- 0.6 -- v/ c i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 250 ua i ges g-e leakage current v ge = v ges , v ce = 0v -- -- 250 na on characteristics v ge(th) g-e threshold voltage i c = 250ua, v ce = v ge 4.0 5.5 7.0 v v ce(sat) collector to emitter saturation voltage i c = 30a , v ge = 15v -- 1.1 1.4 v i c = 30a , v ge = 15v, t c = 125 c -- 1.0 -- v i c = 60 a , v ge = 15v -- 1.3 -- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz -- 3550 -- pf c oes output capacitance -- 245 -- pf c res reverse transfer capacitance -- 90 -- pf switching characteristics t d(on) turn-on delay time v cc = 400 v, i c = 30a, r g = 6.8 , v ge = 15v, inductive load, t c = 25 c -- 18 -- ns t r rise time -- 46 -- ns t d(off) turn-off delay time -- 250 -- ns t f fall time -- 1.3 2.0 us e on turn-on switching loss -- 1.1 -- mj e off turn-off switching loss -- 21 -- mj t d(on) turn-on delay time v cc = 400 v, i c = 30a, r g =6.8 , v ge = 15v, inductive load, t c = 125 c -- 17 -- ns t r rise time -- 45 -- ns t d(off) turn-off delay time -- 270 -- ns t f fall time -- 2.6 -- us e on turn-on switching loss -- 1.1 -- mj e off turn-off switching loss -- 36 -- mj q g total gate charge v ce = 600 v, i c = 30a, v ge = 15v -- 225 -- nc q ge gate-emitter charge -- 30 -- nc q gc gate-collector charge -- 105 -- nc l e internal emitter inductance measured 5mm from pkg -- 7 -- nh
?2007 fairchild semiconductor corporation 3 www.fairchildsemi.com FGH30N60LSD rev. c0 FGH30N60LSD 600 v, 30 a pt igbt electrical characteristics of the diode t c = 25c unless otherwise noted parameter conditions min. typ. max unit v fm i f = 15a i f = 15a t c = 25 c t c = 125 c -- 1.8 1.6 2.2 - vv i rm v r = 600v t c = 25 c - - 100 a t rr i f =1a, di/dt = 100a/ s, v cc = 30v i f =15a, di/dt = 100a/ s, v cc = 390v t c = 25 c t c = 25 c -- -- 35 40 ns ns t a t b q rr i f =15a, di/dt = 100a/ s, v cc = 390v t c = 25 c t c = 25 c t c = 25 c -- - 18 13 27.5 -- - ns ns nc
?2007 fairchild semiconductor corporation 4 www.fairchildsemi.com FGH30N60LSD rev. c0 FGH30N60LSD 600 v, 30 a pt igbt typical performance characteristics figure 1.typical output characteristics figure 2. typical saturation voltage characteristics figure 3. typical saturation voltage figure 4. transfer characteristics cha racteritics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. vg e temperature at variant current leve l 0 1 2 3 4 0 30 60 90 t c = 25 o c v ge = 20v 15v 12v 10v 8v collector current, i c [a] collector-emitter voltage, v ce [v] 0 1 2 3 4 0 30 60 90 t c = 125 o c v ge = 20v 15v 12v 10v 8v collector current, i c [a] collector-emitter voltage, v ce [v] 0 2 4 6 8 10 12 0 30 60 90 common emitter v ce = 20v t c = 25 o c t c = 125 o c collector current, i c [a] gate-emitter voltage,v ge [v] 0 1 2 3 0 30 60 90 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 25 50 75 100 125 0.6 0.8 1.0 1.2 1.4 60a 30a i c = 15a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c ] 0 4 8 12 16 20 0 4 8 12 16 20 i c = 15a 30a 60a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v]
?2007 fairchild semiconductor corporation 5 www.fairchildsemi.com FGH30N60LSD rev. c0 FGH30N60LSD 600 v, 30 a pt igbt typical performance characteristics (continued) figure 7. saturation voltage vs. vge figure 8. capacitance characteristics figure 9. gate charge characteristics figure 10. soa characteeristics figure 11. load current vs. frequency figure 12. turn-on characteristics vs. gate resistance 0 4 8 12 16 20 0 4 8 12 16 20 i c = 15a 30a 60a common emitter t c = 125 o c collector-emitter voltage, v ce [ v ] gate-emitter voltage, v ge [v] 0 5 10 15 20 25 30 100 1000 10000 13000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 50 0 50 100 150 200 250 0 3 6 9 12 15 common emitter i c = 30a t c = 25 o c 300v 200v v cc = 100v gate-emitter voltage, v ge [v] gate charge, q g [nc] 0.1 1 10 100 1000 0.1 1 10 100 50 ? s 100 ? s dc operation 1ms i c max (continuous) i c max (pulsed) single nonrepetitive pulse t c = 25 o c curves must be derated linearly with increase in temperature collector current, i c [a] collector-emitter voltage, v ce [v] 300 0 10 20 30 40 50 10 100 common emitter v cc = 400v, v ge = 15v i c = 30a t c = 25 o c t c = 125 o c t d(on) t r switching time [ns] gate resistance, r g [ ? ] 200 0.1 1 10 100 1000 0 10 20 30 40 50 60 70 80 v cc = 400v load current : peak of square wave duty cycle : 50% t c = 100 o c powe dissipation = 192w load current [a] frequency [khz]
?2007 fairchild semiconductor corporation 6 www.fairchildsemi.com FGH30N60LSD rev. c0 FGH30N60LSD 600 v, 30 a pt igbt typical performance characteristics (continued) figure 13. turn-off characteristics vs. figure 14. turn-on characteristics v s. gate resistance colle ctor current figure 15. turn-off characteristics vs. figure 16. switching loss vs collector current gate re sistance figure 17.switching loss vs collector current figure 18. turn-off switching soa characteristics 0 10 20 30 40 50 100 1000 common emitter v cc = 400v, v ge = 15v i c = 30a t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ] 3000 20 30 40 50 60 70 80 10 100 common emitter v ge = 15v, r g = 6.8 ? t c = 25 o c t c = 125 o c t r t d(on) switching time [ns] collector current, i c [a] 500 20 30 40 50 60 70 80 100 1000 common emitter v ge = 15v, r g = 6.8 ? t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] collector current, i c [a] 6000 5 10 15 20 25 30 35 40 45 50 1 10 100 common emitter v cc = 400v, v ge = 15v i c = 30a t c = 25 o c t c = 125 o c e on e off switching loss [mj] gate resistance, r g [ ? ] 500 10 20 30 40 50 60 70 80 0.1 1 10 100 common emitter v ge = 15v, r g = 6.8 ? t c = 25 o c t c = 125 o c e on e off switching loss [mj] collector current, i c [a] 1 10 100 1000 1 10 100 safe operating area v ge = 15v, t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 200
?2007 fairchild semiconductor corporation 7 www.fairchildsemi.com FGH30N60LSD rev. c0 FGH30N60LSD 600 v, 30 a pt igbt figure 19. transient thermal impedance of igbt figure 20. typical forward voltage drop figure 21. typical reverse current figure 22. typical reverse recovery time 1e-5 1e-4 1e-3 0.01 0.1 1 10 1e-3 0.01 0.1 1 0.5 0.2 0.1 0.05 0.02 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.01 t 1 p dm t 2 0 100 200 300 400 500 600 1e-9 1e-8 1e-7 1e-6 1e-5 1e-4 t c = 25 o c t c = 75 o c reverse current, i r [a] reverse voltage, v r [v] t c = 125 o c 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0.1 1 10 100 t c =75 o c t c =25 o c fprward current, i f [a] forward voltage, v f [v] t c =125 o c 100 200 300 400 500 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 180 190 200 t c = 125 o c t c = 75 o c reverse recovery time, trr [ns] di/dt [a/ ? s] t c = 25 o c i f = 15a
?2007 fairchild semiconductor corporation 8 www.fairchildsemi.com FGH30N60LSD rev. c0 FGH30N60LSD 600 v, 30 a pt igbt mechanical dimensions to-247a03
?2007 fairchild semiconductor corporation 9 www.fairchildsemi.com FGH30N60LSD rev. c0 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild se miconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trade marks. *trademarks of system general corporation, used un der license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products here in to improve reliability, function, or design. fairchild does no t assume any liability arising out of the applicati on or use of any product or circuit described herein; neither does i t convey any license under its patent rights, nor t he rights of others. these specifications do not expand the terms of fai rchilds worldwide terms and conditions, specifical ly the warranty therein, which covers these products. life support policy fairchilds products are not authorized for use as critical components in life support devices or syst ems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or s ystems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the u ser. 2. a critical component in any component of a life s upport, device, or system whose failure to perform can be reasonably e xpected to cause the failure of the life support device or system, o r to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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FGH30N60LSD 600 v, 30 a pt igbt
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